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Electrical Resistivity of Undoped GaAs Single Crystals Grown by Magnetic Field Applied LEC Technique
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- Terashima Kazutaka
- Optoelectronics Joint Research Laboratory
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- Katsumata Tooru
- Optoelectronics Joint Research Laboratory
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- Orito Fumio
- Optoelectronics Joint Research Laboratory
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- Kikuta Toshio
- Optoelectronics Joint Research Laboratory
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- Fukuda Tsuguo
- Optoelectronics Joint Research Laboratory
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Description
We have grown undoped GaAs single crystals by magnetic field applied LEC (MLEC) technique and measured their electrical and optical properties. The most striking result was that the electrical resistivity of undoped GaAs changed from being semi-insulating (108 ohm-cm) to semi-conducting (10 ohm-cm) by increasing the magnetic field (0 to 1300 Oe). PL, DLTS and SIMS measurements suggest that the decrease of resistivity is mainly due to the decrease in concentration of the deep level defects.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 22 (6), L325-L327, 1983
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1570291228169882624
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- NII Article ID
- 130003464759
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- ISSN
- 00214922
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- Text Lang
- en
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- Data Source
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- CiNii Articles