Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
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- MAKIMOTO Toshiki
- NTT Basic Research Laboratories, NTT Corporation
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- YAMAUCHI Yoshiharu
- NEL TechnoSupport
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- KIDO Takatoshi
- Shonan Institute of Technology
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- KUMAKURA Kazuhide
- NTT Basic Research Laboratories, NTT Corporation
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- TANIYASU Yoshitaka
- NTT Basic Research Laboratories, NTT Corporation
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- KASU Makoto
- NTT Basic Research Laboratories, NTT Corporation
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- MATSUMOTO Nobuo
- Shonan Institute of Technology
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2004 322-323, 2004-09-15
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詳細情報 詳細情報について
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- CRID
- 1570572700658187392
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- NII論文ID
- 10022538638
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- NII書誌ID
- AA10777858
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles
