Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
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- TSUCHIYA Yoshinori
- Advanced LSI Technology Laboratory, Toshiba Corp.
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- KOYAMA Masato
- Advanced LSI Technology Laboratory, Toshiba Corp.
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- KOGA Junji
- Advanced LSI Technology Laboratory, Toshiba Corp.
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- NISHIYAMA Akira
- Advanced LSI Technology Laboratory, Toshiba Corp.
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2005 844-845, 2005-09-13
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- CRID
- 1570572700671607552
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- NII論文ID
- 10022543395
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- NII書誌ID
- AA10777858
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles
