Improvement in Trade-Off between Turn-Off Time and Other Electrical Characteristics of Fast-Switching Thyristors

  • Tada Akiharu
    Semiconductor Manufacturing Department, Kita-Itami Works, Mitsubishi Electric Corporation
  • Nakagawa Tsutomu
    Semiconductor Manufacturing Department, Kita-Itami Works, Mitsubishi Electric Corporation
  • Hagino Hiroyasu
    Semiconductor Manufacturing Department, Kita-Itami Works, Mitsubishi Electric Corporation

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Description

Trade-offs between turn-off time, on-state voltage and reverse blocking voltage should be improved in producing fast-switching thyristors with higher blocking voltage and current handling capabilities.<BR>It is well known that the electrical characteristics of a thyristor depend strongly on the gold distribution in its nB layer.<BR>The influence of a boron-diffused layer on the gold distribution in a silicon wafer has been investigated. It has been found that the gold distribution gradient in the central region of the wafer is varied by the existence of a highly-concentrated layer of boron on one side of the wafer, and that if this phenomenon is applied to the production of thyristors, the trade-offs between turn-off time, on-state voltage and reverse blocking voltage are greatly improved.<BR>Further, the effect of the gold distribution gradient on the turn-off time, on-state voltage and reverse leakage current is discussed theoretically.

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Details 詳細情報について

  • CRID
    1570572702374873472
  • NII Article ID
    110003946491
  • NII Book ID
    AA10457675
  • Text Lang
    en
  • Data Source
    • CiNii Articles

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