Selective Disordering of InGaAs Strained Quantum Well

1 Citations 12 References
  • MIYATA Michitaro
    Department of Electronics, Graduate School of Engineering, Osaka University
  • SHIMADA Naoyuki
    Department of Electronics, Graduate School of Engineering, Osaka University
  • UEMUKAI Masahiro
    Department of Electronics, Graduate School of Engineering, Osaka University
  • SUHARA Toshiaki
    Department of Electronics, Graduate School of Engineering, Osaka University
  • NISHIHARA Hiroshi
    Department of Electronics, Graduate School of Engineering, Osaka University

Bibliographic Information

Other Title
  • InGaAs 歪量子井戸の選択的無秩序化の検討

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Description

Selective disordering of quantum well for increasing bandgap energy is discussed for monolithic integration of active and passive elements. Hydrogen plasma processing and phosphorus-doped silica (P:SiO_2) film loading were examined for suppression of InGaAs quantum well disordering. Lasers were fabricated and tested to examine the effects of disordering on active characteristics.

Journal

  • Technical report of IEICE. PS

    Technical report of IEICE. PS 98 (505), 85-90, 1999-01-19

    The Institute of Electronics, Information and Communication Engineers

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Keywords

Details 詳細情報について

  • CRID
    1570572702430059648
  • NII Article ID
    110003182806
  • NII Book ID
    AA1123312X
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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