TCAD/DA for ASIC and MPU Development

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Bibliographic Information

Other Title
  • ASICおよびMPU開発のTCAD/DA

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Description

We have proposed, in this paper a, TCAD/DA methodology for MPU and ASIC with updated processes and devises, which allow a predictive chip-design with quick quantitative correlation studies between process-recipe and CKT & delay parameters required in DA works. Effects of statistical process variation on 0.35um CMOS have been rigorously characterized with a new global TCAD calibratoin technique.Based on the deta, process variation effects on a 0.25um CMOS have been predicted, which is concluded that the Vth and Ids total-variation of the 0.25um CMOS shows less than 10% in production process, which is similar with that of the 0.35um CMOS.

Journal

  • Technical report of IEICE. ICD

    Technical report of IEICE. ICD 97 (579), 55-61, 1998-03-06

    The Institute of Electronics, Information and Communication Engineers

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Details 詳細情報について

  • CRID
    1570572702483695488
  • NII Article ID
    110003316756
  • NII Book ID
    AN10013276
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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