Low Threshold Current 1.3 μm InGaAsP Buried Crescent Lasers : B-2: LD AND LED-1
-
- HIRANO Ryoichi
- LSI Research & Development Laboratory
-
- OOMURA Etsuji
- LSI Research & Development Laboratory
-
- HIGUCHI Hideyo
- LSI Research & Development Laboratory
-
- SAKAKIBARA Yasushi
- LSI Research & Development Laboratory
-
- NAMIZAKI Hirohumi
- LSI Research & Development Laboratory
-
- SUSAKI Wataru
- LSI Research & Development Laboratory
この論文をさがす
収録刊行物
-
- Japanese journal of applied physics. Supplement
-
Japanese journal of applied physics. Supplement 22 (1), 231-234, 1983-02-28
社団法人応用物理学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1570572702486961920
-
- NII論文ID
- 110003953978
-
- NII書誌ID
- AA10457686
-
- ISSN
- 00214922
-
- 本文言語コード
- en
-
- データソース種別
-
- CiNii Articles
