In-situ heavy doping in selective epitaxial growth at low temperatures

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Bibliographic Information

Other Title
  • シリコン低温エピタキシャル成長における不純物高濃度ドーピング

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Description

Heavily boron- and phosphorous-doped epitaxial layers with very abrupt depart transition profiles have been selectively grown on pattemed Si wafers at low temperatures. Doping significantly effects on growth rate of epitaxial film, film structure and selectivity. Boron doping as high as 5x10^<21> cm^<-3> was realized in an epitaxial layer d the growth temperature of 750℃ with the growth rate of 5 nm/min. Thermal diffusion of B atoms into the substrate during the growth was 3O nm from 1O^<21> to 1O^<19> cm^<-3>. In phosphorous doping, P incorporation was shown to be controllable up to 1x10^<19>cm^<-3> in an epi-Si and 8x1O^<19>cm^<-3> in an epi-SiGe grown at 650℃. The epi-SiGe grown with the addition of GeH_4 showed a higher growth rate of 5 nm/min than than of the epi-Si of 0.5nm/min. P concentrations diffused from epi-SiGe into Si substrate change from 8x10^<19> to 10^<18>cm^<-3> only in 15nm.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 96 (396), 101-108, 1996-12-06

    The Institute of Electronics, Information and Communication Engineers

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Details 詳細情報について

  • CRID
    1570572702489385600
  • NII Article ID
    110003309619
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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