Room-temperature operation at 333 nm of Al_<0.03>Ga_<0.97>N/Al_<0.25>Ga_<0.75>N quantum-well light-emitting diodes with Mg-doped superlattice layers

収録刊行物

• Appl. Phys. Lett.

  Appl. Phys. Lett. 77 (2), 175-177, 2000