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Suppression of stand-by tunnel current in ultra-thin gate oxide MOSFETs by dual oxide thickness MTCMOS (DOT-MTCMOS)
Journal
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- Extended Abstract of the 1999 International Conference on Solid State Devices and Materials
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Extended Abstract of the 1999 International Conference on Solid State Devices and Materials 264-265, 1999
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Details 詳細情報について
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- CRID
- 1570854175156747392
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- NII Article ID
- 10012856071
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- Data Source
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- CiNii Articles