Novel Method of Threshold Voltage Control of Metal Gate CMOSFETs Using Channel Epitaxy

  • KIM W. S.
    Semiconductor R&D Division, Samsung Electronics Co., Ltd.
  • SONG S.
    Semiconductor R&D Division, Samsung Electronics Co., Ltd.
  • KHANG Y.
    Semiconductor R&D Division, Samsung Electronics Co., Ltd.
  • CHOE T. H.
    Semiconductor R&D Division, Samsung Electronics Co., Ltd.
  • YOO J. Y.
    Semiconductor R&D Division, Samsung Electronics Co., Ltd.
  • LEE N. I.
    Semiconductor R&D Division, Samsung Electronics Co., Ltd.
  • FUJIHARA K.
    Semiconductor R&D Division, Samsung Electronics Co., Ltd.
  • KANG H. K.
    Semiconductor R&D Division, Samsung Electronics Co., Ltd.
  • MOON J. T.
    Semiconductor R&D Division, Samsung Electronics Co., Ltd.

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Details 詳細情報について

  • CRID
    1570854175236483712
  • NII Article ID
    10017198502
  • NII Book ID
    AA10777858
  • Text Lang
    en
  • Data Source
    • CiNii Articles

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