Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method
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- TERASHIMA Koichi
- System Devices Research Laboratories, NEC Corporation
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- MIURA Yoshinao
- System Devices Research Laboratories, NEC Corporation
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- IKARASHI Nobuyuki
- System Devices Research Laboratories, NEC Corporation
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- OSHIDA Makiko
- R&D Support Center, NEC Corporation
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- MANABE Kenzo
- System Devices Research Laboratories, NEC Corporation
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- YOSHIHARA Takuya
- System Devices Research Laboratories, NEC Corporation
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- TANAKA Masayasu
- System Devices Research Laboratories, NEC Corporation
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- WAKABAYASHI Hitoshi
- System Devices Research Laboratories, NEC Corporation
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収録刊行物
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2004 182-183, 2004-09-15
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詳細情報 詳細情報について
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- CRID
- 1570854175634991488
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- NII論文ID
- 10022538147
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- NII書誌ID
- AA10777858
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles