Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs
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- SAKASHITA Shinsuke
- Process Development Dept., Process Technology Development Div., Production and Technology Unit, Renesas Technology Corporation
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- MORI Kenichi
- Process Development Dept., Process Technology Development Div., Production and Technology Unit, Renesas Technology Corporation
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- TANAKA Kazuki
- Process Engineering Section, Wafer Process Engineering Dept., Renesas Semiconductor Engineering Corporation
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- MIZUTANI Masaharu
- Process Development Dept., Process Technology Development Div., Production and Technology Unit, Renesas Technology Corporation
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- INOUE Masao
- Process Development Dept., Process Technology Development Div., Production and Technology Unit, Renesas Technology Corporation
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- YAMANARI Shinichi
- Process Development Dept., Process Technology Development Div., Production and Technology Unit, Renesas Technology Corporation
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- YUGAMI Jiro
- Process Development Dept., Process Technology Development Div., Production and Technology Unit, Renesas Technology Corporation
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- MIYATAKE Hiroshi
- Process Development Dept., Process Technology Development Div., Production and Technology Unit, Renesas Technology Corporation
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- YONEDA Masahiro
- Process Development Dept., Process Technology Development Div., Production and Technology Unit, Renesas Technology Corporation
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2005 854-855, 2005-09-13
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- CRID
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- NII論文ID
- 10022543427
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- NII書誌ID
- AA10777858
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- en
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