GaAlAs/GaAs Surface Emitting Laser with High Reflective TiO<SUB>2</SUB>/SiO<SUB>2</SUB> Multilayer Bragg Reflector

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説明

First, it has been made clear that the important parameters of the SE laser are its active layer thickness d and the mirror reflectivity R. The required values of three parameters such as threshold gain gth, threshold current density Jth, and differencial quantum efficiency ηd are obtained for d=2∼3 μm and R=95%. At this condition gth is estimated as 300 cm−1 (Nth=3×1018 cm−3), Jth is 25∼30 kA/cm2, and ηd is 40%. Next, in order to obtain a reflectivity as high as 95%, a TiO2/SiO2 multilayer Bragg reflector was introduced. It was found that a good quality TiO2 film could be evaporated by leaking oxygen through a variable leak valve to hold 1×10−4 Torr. Then, a 7-pair TiO2/SiO2 multilayer Bragg reflector was fabricated; its peak reflectivity was 95% at 8800 Å. A room-temperature pulsed operation of a GaAlAs/GaAs SE layer was achieved and the minimum threshold current was reduced to as low as 150 mA when a round mesa was fabricated to 20 μm in diam.

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詳細情報 詳細情報について

  • CRID
    1570854177382886656
  • NII論文ID
    110003911167
  • NII書誌ID
    AA10457675
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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