Solid-State Electrochromic Device Consisting of Amorphous WO<SUB>3</SUB> and Various Thin Oxide Layers

  • Shizukuishi Makoto
    Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
  • Shimizu Isamu
    Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
  • Inoue Eiichi
    Imaging Science and Engineering Laboratory, Tokyo Institute of Technology

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説明

A mixed oxide containing Cr2O3 was introduced into an amorphous WO3 solid-state electrochromic device (ECD) in order to improve its colour memory effect. The electrochromic characteristics were greatly affected by the chemical constituents of a dielectric layer on the a-WO3 layer. Particularly, long memory effect and low power dissipation were attained in a solid-state ECD consisting of a-WO3 and Cr2O3·V2O5(50 wt.%).<BR>Some electrochromic characteristics of the a-WO3/Cr2O3·V2O5 ECD and the role of V2O5 were investigated.

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詳細情報 詳細情報について

  • CRID
    1570854177400554752
  • NII論文ID
    110003896243
  • NII書誌ID
    AA00690800
  • ISSN
    00214922
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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