High density 64Mb Mask ROM

Bibliographic Information

Other Title
  • 大容量64MビットマスクROM

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Description

We have developed a very high density 64Mb Mask ROM which achieves a typical access time of 100ns. The Mask ROM is fabricated using 0.6μ CMOS technology and utiliz es many high speed techniques. These include a timing signal generator circuit which minimizes variation in pulse width despite changes in process parameters and ambient temperature,a fully differential sense amplifier,a new output butter control circuit which includes a supply voltage detection circuit,etc.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 94 (73), 77-82, 1994-05-27

    The Institute of Electronics, Information and Communication Engineers

Keywords

Details 詳細情報について

  • CRID
    1570854177461290112
  • NII Article ID
    110003310281
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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