Effects of the velocity-saturated region on MOSFET Characteristics

Bibliographic Information

Other Title
  • MOSFETの特性に及ぼす速度飽和領域の影響

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Description

A simple,accurate and universal relationship between MOSFET drive current,effective channel length,and gate bias has been found.It can be described by asimple analytical model,whose validity is supported by numerical simulation.According to the model,the length of a velocity-saturated region plays a crucial role.Its close corralation with-short channel effects suggests that reduction of gate oxide thickness is the only effective way to improve MOSFET drive performance.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 94 (180), 1-8, 1994-07-25

    The Institute of Electronics, Information and Communication Engineers

Keywords

Details 詳細情報について

  • CRID
    1570854177461300736
  • NII Article ID
    110003310202
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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