GaAlAs/GaAs MOCVD Growth for Surface Emitting Laser

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A GaAlAs/GaAs Metalorganic chemical vapor deposition (MOCVD) has been introduced for growing GaAlAs/GaAs wafers with a thick active layer (d≅3 μm) and multilayer Bragg reflectors for surface emitting lasers. A nominal threshold current density as low as 3.6 kA/cm2 μm was obtained in stripe cleaved lasers with a cavity length of 400 μm. GaAlAs/GaAs surface emitting lasers were fabricated by using these MOCVD grown wafers. The room-temperature pulsed operation of an MOCVD grown laser was obtained with a threshold current of 300 mA as a primary demonstration. In addition, a reflectivity of 97% was achieved by a Zn-doped 30 layer Ga0.9Al0.1As/AlAs Bragg reflector. These experimental results suggest the possibilities of a low-threshold surface emitting laser grown by MOCVD and potential applications toward integrated optics based on surface emitting lasers.

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詳細情報 詳細情報について

  • CRID
    1570854177465231488
  • NII論文ID
    110003954643
  • NII書誌ID
    AA10457675
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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