Cuinse2 Homojunction Diode Fabricated by Phosphorus OP9
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Homojunction diodes were fabricated by doping of phosphorus to n-type Cu-In-Se thin films. The junction prepared by P implantation at the energy of 50 keV with the dose of 1 x 10(15) ions/cm 2 showed a rectification ratio of more than 100. Conduction in Cu-In-Se thin films, whose crystal structure is of the chalcopyrite type, changes from n- to p-type in such a way that group V elements (N, P, Sb, or Bi) substitute for Se in the film.
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 62 (14), 1656-1657, 1993-04-05
American Institute of Physics
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詳細情報 詳細情報について
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- CRID
- 1570854177629091328
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- NII論文ID
- 120002441239
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- NII書誌ID
- AA00543431
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- ISSN
- 00036951
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- Web Site
- http://hdl.handle.net/10228/1498
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- 本文言語コード
- en
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- データソース種別
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