Y–Ba–Cu–O Film Growth by OMCVD Using N<SUB>2</SUB>O

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  • Tsuruoka Taiji
    Research and Development Group, Oki Electric Industry Co., Ltd.
  • Kawasaki Ryodo
    Research and Development Group, Oki Electric Industry Co., Ltd.
  • Abe Hitoshi
    Research and Development Group, Oki Electric Industry Co., Ltd.

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Description

By using N2O gas as an oxygen source, Y–Ba–Cu–O films prepared at the growth temperature of 650°C on the SrTiO3(100) substrate showed zero resistance at 79 K, while by using O2 gas, a growth temperature of 800°C was required to obtain the same film quality. The deposition rate of Y–Ba–Cu–O films on MgO(100) substrates by using N2O gas was nearly one half of that using O2 gas. The deposition rate monotonically increased with increasing of the growth temperature from 600°C to 800°C. The electrical quality of films prepared on the substrate became poorer in the series of SrTiO3(100), MgO(100) and Si(100) substrates. X-ray diffraction patterns of Y–Ba–Cu–O films grown on SrTiO3(100) and MgO(100) substrates indicate c-axis orientation, but those of films on Si(100) substrates did not indicate c-axis orientation.

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