Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Well Laser Grown on Si Substrate

J-STAGE
  • Hasegawa Yoshiaki
    Department of Electrical and Computer Engineering, Nagoya Institute of Technology
  • Egawa Takashi
    Research Center for Micro-Structure Devices, Nagoya Institute of Technology
  • Jimbo Takashi
    Research Center for Micro-Structure Devices, Nagoya Institute of Technology
  • Umeno Masayoshi
    Department of Electrical and Computer Engineering, Nagoya Institute of Technology

説明

A low-threshold AlGaAs/GaAs patterned quantum well laser has been fabricated on a V-grooved GaAs/Si substrate using metal-organic chemical vapor deposition. High-resolution scanning electron microscope images show that the GaAs active layers with reduced volume are crescent-shaped, whose thicknesses are about 20∼25 nm and widths are about 75∼125 nm. The laser with a 300-μm-long cavity has exhibited the continuous-wave threshold current of as low as 16 mA at 300 K, which is the lowest value for the GaAs-based conventional quantum well lasers on Si.

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