Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates
Journal
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- Semicond. Sci. Technol.
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Semicond. Sci. Technol. 8 998-1010, 1993
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Details 詳細情報について
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- CRID
- 1571135651669300096
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- NII Article ID
- 80007178914
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- Data Source
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- CiNii Articles