Metallizaition Technique for Aluminum Nitride

3 References
  • SASAKI KAZUTAKA
    Advanced Electronic Materials and Parts R&D Department Itami Research Laboratories SUMITOMO EIECTRIC INDUSTRIES, LTD.
  • NATSUHARA MASUHIRO
    Advanced Electronic Materials and Parts R&D Department Itami Research Laboratories SUMITOMO EIECTRIC INDUSTRIES, LTD.
  • NAKANISHI HIDENORI
    Advanced Electronic Materials and Parts R&D Department Itami Research Laboratories SUMITOMO EIECTRIC INDUSTRIES, LTD.
  • GOTO TOMOJI
    Advanced Electronic Materials and Parts R&D Department Itami Research Laboratories SUMITOMO EIECTRIC INDUSTRIES, LTD.
  • NAKATA HIROHIKO
    Advanced Electronic Materials and Parts R&D Department Itami Research Laboratories SUMITOMO EIECTRIC INDUSTRIES, LTD.
  • TOBIOKA MASAAKI
    Advanced Electronic Materials and Parts R&D Department Itami Research Laboratories SUMITOMO EIECTRIC INDUSTRIES, LTD.

Bibliographic Information

Other Title
  • 窒化アルミニウムへのメタライズ技術

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Description

Recently, as the semiconductor devices generate(emit) much heat due to their higher integration and power consumption, higher thermal conductivity is needed for the substrate of these devices. As the termal conductivity of Aluminum Nitride is ten times as high as that of Aluminum Oxide, it is suitable for the substrate of these high heat generating semiconductor devices. We will show you our technology of metallization on Aluminum Nitride, that is key technology for ceramic substrate.

Journal

  • IEICE technical report. EMD

    IEICE technical report. EMD 96 (363), 25-30, 1996-11-15

    The Institute of Electronics, Information and Communication Engineers

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Keywords

Details 詳細情報について

  • CRID
    1571135652339718400
  • NII Article ID
    110003293227
  • NII Book ID
    AN10383978
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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