Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si

  • Hayafuji Norio
    Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation
  • Miyashita Motoharu
    Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation
  • Nishimura Takashi
    Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation
  • Kumabe Hisao
    Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation
  • Kadoiwa Kaoru
    Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation
  • Murotani Toshio
    Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation

書誌事項

公開日
1990
公開者
社団法人応用物理学会

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説明

This paper describes the dependence of the dislocation density reduction effect on the employing position of either thermal cyclic annealing (TCA) or InGaAs-GaAs strained-layer superlattice (SLS) in GaAs-on-Si grown by metalorganic chemical vapor deposition (MOCVD). The dislocation density is reduced to one twenty-fifth of that in as-grown sample by the TCA as the position of TCA becomes farther than about 1.5 μm from the Si surface. The dislocation density is additionally reduced to one third by the SLS as the position of SLS becomes farther than about 2.0 μm. As a result, the dislocation density is reduced to 1.5×106 cm−2 by the combined use of TCA and SLS. The dislocation density reduction effect of TCA is determined mainly by the degree of residual stress. That effect of SLS is determined mainly by the degree of additional stress generated by SLS.

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詳細情報 詳細情報について

  • CRID
    1571135652364584960
  • NII論文ID
    110003901629
  • NII書誌ID
    AA10457675
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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