Embedded DRAM Technology : DRAM merges to ASIC
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- ABE Keiichiroh
- Texas Instruments Japan, Ltd Miho plant Design Center
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- HASHIMOTO Masashi
- Texas Instruments Japan, Ltd Miho plant Design Center
Bibliographic Information
- Other Title
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- Embedded DRAM 技術 : DRAMはASICに溶け込む
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Description
An overview of an ASIC process technology logic based embedded DRAM test chip results are reported. This test chip employed 1T1C type cell. 0.5um ASIC process technology is applied. Initial silicon is over 80% yield without changing of process. And this chip has high speed data rate maximum 200MB/S. We confirmed that ASIC module feasibility.
Journal
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- Technical report of IEICE. ICD
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Technical report of IEICE. ICD 97 (57), 19-24, 1997-05-23
The Institute of Electronics, Information and Communication Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1571135652436154752
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- NII Article ID
- 110003316546
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- NII Book ID
- AN10013276
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- Text Lang
- ja
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- Data Source
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- CiNii Articles