シランガスと各種シリコン表面の相互作用

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Bibliographic Information

Other Title
  • Silane Gas Interactions with Various Silicon Surface

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Description

シリコン表面上のシランの分解メカニズムは明らかにされていない。以前、我々は異なった希釈ガス,希釈率,シリコン表面に対してシランガスの熱分解特性の評価を行った。その結果、同じガスでも分解開始温度,分解率ならびに分解挙動,活性化エネルギーは著しく異なることが分かった。一方、固体表面のエネルギー準位,気体のイオン化エネルギーや電子親和力などの物性値は周知の数値である。本報告では、これら周知の数値と実験結果から、各種表面におけるシランガスの分解メカニズムを説明する。
Mechanisms for SiH_4 decomposition on Si surfaces are not well understood. Previously, we evaluated the thermal decomposition characteristics of SiH_4 using the various dilution gases and various dilution rates on four kinds of Si surfaces (non-doped Si, SiO_2, n^+Si, and p^+Si) and two halogen terminated surfaces (F, Cl). The results indicated that even for the same gases, the starting decomposition temperature, decomposition rate and the decomposition mechanisms as well as activation energies were quite different. In general, the energy level of solid surface, ionization potential of gas molecule, and electron affinity were widely known. In this report, we present the mechanisms for SiH_4 decomposition on various Si surfaces based on these and the experimental results.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 95 (194), 21-27, 1995-07-27

    The Institute of Electronics, Information and Communication Engineers

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Keywords

Details 詳細情報について

  • CRID
    1571135652442728832
  • NII Article ID
    110003309743
  • NII Book ID
    AN10013254
  • Text Lang
    en
  • Data Source
    • CiNii Articles

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