Orientation Control and Photoemission Properties of Poly(dimethylsilane)

1 Citations 9 References
  • HATTORI Reiji
    Department of Electrical Engineering, Faculty of Engineering, OSaka University
  • SUGANO Takeshi
    Department of Electrical Engineering, Faculty of Engineering, OSaka University
  • SHIRAFUJI Junji
    Department of Electrical Engineering, Faculty of Engineering, OSaka University

Bibliographic Information

Other Title
  • ポリジメチルシランの配向制御と発光特性

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Description

We have prepared epitaxially grown poly(dimethylsilane) (PDMS) films the silicon chains of which were pallarel to and perpendicular to the substrate by evaporating PDMS powder source, and observed the photoe-mission properties of these films. These configrations were observed by x-ray diffraction and atomic force microscopy (AFM). From the photoluminescence(PL), exitation and absorption spectroscopies, we found that the photoemission takes place from the longest delocalized region in silicon backbone and the region is widened by the orientaion or crystallization. Disorderness of the films were observed to be reduced by the epitaxial growth, which makes the stoks sift little and PL intensity strong.

Journal

  • Technical report of IEICE. OME

    Technical report of IEICE. OME 96 (30), 17-22, 1996-05-07

    The Institute of Electronics, Information and Communication Engineers

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Keywords

Details 詳細情報について

  • CRID
    1571135652443954816
  • NII Article ID
    110003300671
  • NII Book ID
    AN10013334
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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