Heavy Ion Irradiation Effect of MIM Capacitor on GaAs Substrate

7 References
  • YAJIMA K.
    Semiconductor Group Manufacturing Technology Div., Mitsubishi Electric Corporation
  • SASAKI H.
    Semiconductor Group Manufacturing Technology Div., Mitsubishi Electric Corporation
  • ASANO T.
    Kamakura Works, Mitsubishi Electric Corporation
  • KOMARU M.
    High Frequency & Optical Semiconductor Div., Mitsubishi Electric Corporation
  • MIZUGUCHI K.
    Semiconductor Group Manufacturing Technology Div., Mitsubishi Electric Corporation
  • MATSUZAKI K.
    Electronic and Information Technology Departmen
  • MATSUMOTO A.
    Electronic and Information Technology Departmen
  • MATSUDA S.
    Electronic and Information Technology Departmen

Bibliographic Information

Other Title
  • GaAs 基板上の MIM(Metal Insulator Metal) キャパシタへの重粒子照射

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Description

In space-borne applications radiation hardness becomes an especially important factor to be considered. Radiation damages for γ-ray or X-ray have been studied on GaAs MMIC. Although, only few attempts have so far been made at heavy ion irradiation. In this study, we have irradiated heavy ions to a MIM capacitor which is one of important parts os the GaAs MMIC. It was found that, the breakdown voltage was reduced, but the extrapolated TDDB lifetime in the low voltage region was hardly degraded by the irradiation

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Details 詳細情報について

  • CRID
    1571135652444531584
  • NII Article ID
    110003301978
  • NII Book ID
    AN10013243
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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