Energy Level Alignment and Band Bending at TPD/Metal Interfaces Studied by Kelvin Probe Method

  • HAYASHI Naoki
    Department of Chemistry, Graduate School of Science, Nagoya University
  • ITO Eisuke
    Venture Business Laboratory, Nagoya University
  • ISHII Hisao
    Department of Chemistry, Graduate School of Science, Nagoya University
  • OUCHI Yukio
    Department of Chemistry, Graduate School of Science, Nagoya University
  • SEKI Kazuhiko
    Department of Chemistry, Graduate School of Science, Nagoya University, Research Center for Materials Science, Nagoya University

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説明

In order to examine the validityof Mott-Schottky model at organic / metal interfaces, the position of the vacuum level of N, N'-bis(3-methylphenyl)-N, N'-diphenyl-[1, 1'-biphenyl]-4, 4'-diamine (TPD) film formed on various metal substrates (Au, Cu, Ag, Mg and Ca) was measured as a function of the film-thickness by Kelvin probe method in ultrahigh vacuum (UHV). TPD is a typical hole-injecting material for organic electroluminescent devices. At all the interfaces, sharp shifts of the vacuum level were observed within 1 nm thickness. Further deposition of TPD up to 100 nm did not change the position of the vacuum level indicating no based bending at these interfaces. These findings clearly demonstrate the Fermi level alignment between metal and bulk TPD solid is not established within typical thickness of real devices.

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詳細情報 詳細情報について

  • CRID
    1571135652465052672
  • NII論文ID
    110003211935
  • NII書誌ID
    AA10826283
  • ISSN
    09168524
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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