A 1K-Gate GaAs Gate Array
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説明
1050-gate arrays have been successfully designed and fabricated. Chip size is 3.75×3.75 mm. A basic cell can be programmed as an E/D-type DCFL three-input NOR gate. Speed performance measured at 0.2-mW/gate power dissipation was as follows. Unloaded (fanout=1) propagation delay time was 100 ps/gate. Load dependence of the delay time was 65 ps/1 mm interconnection line, 27 ps/fanout, and 3.33 ps/crossover load. This leads to 350 ps/gate delay under the assumed loading condition of interconnection line length=3 mm and three fanouts. The gate array was applied to 6×6 bit parallel multiplier circuit. The 10.6 ns multiplication time was measured at 380 mW power consumption. The operation speed of the personalized circuit can be well described by the basic performance provided by ring oscillator measurement.
収録刊行物
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- IEEE Journal of Solid-State Circuits
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IEEE Journal of Solid-State Circuits 19 (5), 721-728, 1984-10
Institute of Electrical and Electronics Engineers (IEEE)
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詳細情報 詳細情報について
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- CRID
- 1571135652494624000
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- NII論文ID
- 120000861758
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- ISSN
- 00189200
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- Web Site
- http://hdl.handle.net/10119/5005
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles