Low Temperature Characteristics of GaAs FET (3SK97, 3SK121) for UHF SQUID
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- Takeda Takashi
- Institute of Applied Physics, University of Tsukuba
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- Haeiwa Tetsuzi
- Institute of Applied Physics, University of Tsukuba
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- Kita Eiji
- Institute of Applied Physics, University of Tsukuba
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- Tasaki Akira
- Institute of Applied Physics, University of Tsukuba
説明
The low temperature characteristics of GaAs FET (3SK97, 3SK121) were examined with respect to the usage of a GaAs FET for a preamplifier of a UHF SQUID. A diode connection of the FET was also attempted in which it was utilized as a varactor diode operating at 4.2K. A preamplifier for the UHF SQUID was successfully constructed using these FETs.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 27 (1), 161-162, 1988
公益社団法人 応用物理学会
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詳細情報 詳細情報について
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- CRID
- 1571135653100551424
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- NII論文ID
- 130003467430
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- ISSN
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles
