Effect of Process Temperature on SiC MOS Properties
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- WANG X. W.
- Department of Electrical Engineering, Yale University
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- GUO Xin
- Department of Electrical Engineering, Yale University
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- MA T. P.
- Department of Electrical Engineering, Yale University
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- CUI G. J.
- Jet Process Corporation
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- TAMAGAWA T.
- Jet Process Corporation
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- HALPERN B.
- Jet Process Corporation
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- TAKAHASHI Y.
- Department of Electronics Engineering, Nihon University
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収録刊行物
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 1998 482-483, 1998-09-07
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- CRID
- 1571417125189669120
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- NII論文ID
- 10017197206
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- NII書誌ID
- AA10777858
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles