A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme
Journal
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- IEEE Journal of Solid-State Circuits
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IEEE Journal of Solid-State Circuits 38 (1), 2003
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Details 詳細情報について
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- CRID
- 1571417126135280128
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- NII Article ID
- 10031112222
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- Data Source
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- CiNii Articles