Growth Kinetics of Ultrathin Oxynitrided Silicon Dioxide Films

8 References
  • KOYAMA Noboru
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology
  • ENDOH Toshiaki
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology
  • FUKUDA Hisashi
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology
  • NOMURA Shigeru
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology
  • ISHIZUKA Kenji
    Toshiba Microelectronics Corporation

Bibliographic Information

Other Title
  • 酸窒化極薄シリコン酸化膜の成長機構

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Description

Ultrathin oxynitrided SiO_2 films have been formed in a nitrous oxide (N_2O) and a nitric oxide (NO) gases as a function of oxidation temperature and time. The overall growth follows the linear-parabolic law proposed by Deal and Grove. The chemical etching profiles of these films indicate much smaller chemical etching rate near the SiO_2/Si interface as compared to bulk layer. This means that the nitrogen-rich layer is present near the SiO_2/Si interface. In the model, the oxidation initially occurs via fast reaction of N_2O and/or NO molecules with silicon surface in the initial stage, but then slow down owing to the reduced diffusivity in the interfacial nitrogen-rich layer formed at the interface. This behavior is more critical for NO-oxynitrided SiO_2 films as compared to that of N_2O-oxynitrided films.

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Details 詳細情報について

  • CRID
    1571417127329326976
  • NII Article ID
    110003199116
  • NII Book ID
    AN10012932
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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