Design of Wide Bandwidth,Low Voltage GaAs Operational Amplifiers
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- Nagai Takashi
- Institute of Science and Engineering,Chuo University
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- Enomoto Tadayoshi
- Institute of Science and Engineering,Chuo University
Bibliographic Information
- Other Title
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- 広帯域、低電圧GaAs演算増幅器
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Description
2 kinds of wide bandwidth,low voltage GaAs operational amplifiers (op amps),a high open-loop gain op amp and a high speed op amp,were designed with 0.5μm GaAs MESFET technology and newly d eveloped differential amplifiers.Calculated open-loop gain A_0, unity gain frequency f_T,common mode rejection ratio(CMRR) and power dissipation P were 62.1dB,1.54GHz,63.1dB and 131mW, respectively for the high gain op amp.Sirilarly,A_0=57.5dB,f_T=1. 86GHz,CMRR=61.9dB,P=172mW were obtained for the high speed op amp. Power supply voltages were V_DD>=1V and V_SS>=-1V.
Journal
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- IEICE technical report. Electron devices
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IEICE technical report. Electron devices 93 (415), 15-22, 1994-01-19
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1571417127332645888
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- NII Article ID
- 110003200458
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- NII Book ID
- AN10012954
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- Text Lang
- ja
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- Data Source
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- CiNii Articles