High Speed Enhancement-Mode GaAs MESFET Integrated Circuits : B-1: GaAs IC
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- MIZUTANI Takashi
- Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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- KATO Naoki
- Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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- ISHIDA Satoru
- Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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- ASAI Kazuyoshi
- Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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- SAKAKIBARA Yutaka
- Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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- KOMATSU Kazuhiko
- Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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- OHMORI Masamichi
- Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
この論文をさがす
収録刊行物
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- Japanese journal of applied physics. Supplement
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Japanese journal of applied physics. Supplement 19 (1), 329-333, 1980-04-30
社団法人応用物理学会
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詳細情報 詳細情報について
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- CRID
- 1571417127417949312
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- NII論文ID
- 110003957231
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- NII書誌ID
- AA10457686
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- ISSN
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles