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- MORISHITA Fukasi
- ULSI Development Center, Matsushita Electronics Corporation
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- ARIMOTO Kazutami
- ULSI Development Center, Matsushita Electronics Corporation
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- FUJISHIMA Kazuyasu
- System LSI Development Center, Matsushita Electric Corporation
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- OZAKI Hideyuki
- ULSI Development Center, Matsushita Electronics Corporation
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- YOSHIHARA Tsutomu
- Display Devices Works, Mitsubishi Electric Corporation
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説明
A novel body potential-controlling technique for floating SOI CMOS circuits is proposed and verified in this study. High-speed operation is realized with a small chip size by using body-floating SOI transistors. The use of this technique allows the threshold voltage of the body-floating transistors to be varied transitionally. Therefore, the standby current of SOI CMOS logic is reduced to less than 1/50th of that required by the non-controlled operation of the body potential, and the logic operates at a high speed during the active period. There is no speed penalty for the recovery operation from the standby mode. This technique supports sub-1V operation, which will be required by future battery-operated devices with wide-range covering.
収録刊行物
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- IEICE transactions on electronics
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IEICE transactions on electronics 84 (2), 253-259, 2001-02-01
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詳細情報 詳細情報について
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- CRID
- 1571417127442218496
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- NII論文ID
- 110003212162
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- NII書誌ID
- AA10826283
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- ISSN
- 09168524
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles