Analysis of Transfer Gate in CMOS Image Sensor

参考文献5件
  • PARK Seong-Hyung
    Dept. of Electronics Engineering, Chungnam National University
  • KWON Hyuk-Min
    Dept. of Electronics Engineering, Chungnam National University
  • BOK Jung-Deuk
    Dept. of Electronics Engineering, Chungnam National University
  • HAN In-Shik
    Dept. of Electronics Engineering, Chungnam National University
  • CHOI Woon-Il
    Dept. of Electronics Engineering, Chungnam National University
  • LEE Hi-Deok
    Dept. of Electronics Engineering, Chungnam National University

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説明

Dark current is one of the key parameters for image quality in CMOS image sensor(CIS). Transfer device structure is modified in this paper to reduce the dark current of high density and high performance CMOS image sensor. It is shown that dark current is reduced a lot by the proposed structure. It is also shown that there is little change of device performance as well as less device degradation under hot carrier compared with the reference structure. It is believed that the improvement of dark current is due to the local increase of threshold voltage.

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詳細情報 詳細情報について

  • CRID
    1571417127497409024
  • NII論文ID
    110007889992
  • NII書誌ID
    AN10012954
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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