Field-Induction-Drain Thin-Film Transistors for Liquid-Crystal Display Applications

1 Citations

Search this article

Description

A field-induction-drain (FID) poly-Si thin-film transistor (TFT), in which an electrically induced layer is used as a drain, is proposed. This TFT achieves a low OFF current and a high ON/OFF current ratio by simply incorporating an additional gate electrode. Moreover, the structure can be modified to make it suitable for complementary MOS (CMOS) applications. In this unified-structure FID (UFID) TFT, n-channel operation and p-channel operation are interchangeable. This paper presents this electrically induced layer which works well as a TFT drain and has beneficial influence on TFT characteristics.

Journal

Citations (1)*help

See more

Keywords

Details 詳細情報について

  • CRID
    1571698602317408896
  • NII Article ID
    110003902161
  • NII Book ID
    AA10457675
  • Text Lang
    en
  • Data Source
    • CiNii Articles

Report a problem

Back to top