A 0.54μm^2 Self-Aligned, HSG Floating Gate Cell (SAHF Cell) for 256Mbit Flash Memories

6 References

Bibliographic Information

Other Title
  • 256Mフラッシュメモリ用0.54μm^2 SAHF (Self-Aligned HSG Floating gate) セル

Search this article

Description

A 0.54μm^2 Self-Aligned memory cell with Hemispherical-grained (HSG) poly-Si Floating gate (SAHF cell) has been developed for 256Mbit flash memories. Applying hemispherical-grained (HSG) poly-Si to floating gate extends the upper surface area double that of the floating gate in comparison with the conventional ones. A high capacitive-coupling ratio of 0.8 and buried n^+ diffusion layers which are self-aligned to the floating gate poly-Si are realized simultaneously with a simple cell structure and fewer process steps.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 96 (63), 69-76, 1996-05-23

    The Institute of Electronics, Information and Communication Engineers

References(6)*help

See more

Keywords

Details 詳細情報について

  • CRID
    1571698602396228736
  • NII Article ID
    110003309680
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

Report a problem

Back to top