Time Response of Depletion Layer in Short n-GaAs Schottky Diode

  • 相島 亜洲雄
    Department of Electronics and Electrical Engineering, Fukuyama University

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説明

Time response of the depletion layer in an n-GaAs submicron Schottky diode for step voltage and small ac voltage was investigated by using a simplified diode model. It was found that the electron velocity overshoot effect alone worsen the switching speed of the Schottky diode but both the electron velocity overshoot effect and the dependence of the momentum and energy relaxation times on electron energy improve the swiching behavior of the diode. It was also demonstrated that the inductive current flows in the depletion layer of the diode for some frequency range. In order to correctly estimate the cutoff frequency of the n-GaAs submicron devices, not only the velocity overshoot effect but also the transient time response of the depletion layer in the devices for step terminal voltage must be taken into account in the analysis.

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詳細情報 詳細情報について

  • CRID
    1571698602484668416
  • NII論文ID
    110007406203
  • NII書誌ID
    AN00217655
  • ISSN
    0286858X
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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