Polymer field-effect transistors by a drawing method
この論文をさがす
抄録
We demonstrated the polymer field-effect transistors (FETs) utilizing regioregular poly(3-alkylthiophene)s (P3AT) films prepared by a drawing method. The P3AT film exhibited large optical dichroic ratio, which originated in the polymer backbones aligned to the drawing direction. In-plane anisotropy and enhancement of FET characteristics have been observed that are caused by molecular alignment. In the case of poly(3-dodecylthiophene), the hole mobility along the drawing direction was enhanced by a factor of 25 compared with that of spin-coated film.
収録刊行物
-
- Applied Physics Letters
-
Applied Physics Letters 84 (23), 4608-4610, 2004-05-19
American Institute of Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1571698602559142016
-
- NII論文ID
- 120002440758
-
- NII書誌ID
- AA00543431
-
- ISSN
- 00036951
-
- Web Site
- http://hdl.handle.net/10228/578
-
- 本文言語コード
- en
-
- データソース種別
-
- CiNii Articles