Polymer field-effect transistors by a drawing method

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Published
2004-05-19
Publisher
American Institute of Physics

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We demonstrated the polymer field-effect transistors (FETs) utilizing regioregular poly(3-alkylthiophene)s (P3AT) films prepared by a drawing method. The P3AT film exhibited large optical dichroic ratio, which originated in the polymer backbones aligned to the drawing direction. In-plane anisotropy and enhancement of FET characteristics have been observed that are caused by molecular alignment. In the case of poly(3-dodecylthiophene), the hole mobility along the drawing direction was enhanced by a factor of 25 compared with that of spin-coated film.

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