溶液気化ＣＶＤ法によるメモリ用BSTおよびPZTキャパシタ膜
書誌事項
- タイトル別名
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- BST and PZT-Capacitor Film for Dielectric Memory by Solution Source CVD
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説明
BST : (Ba, Sr) TiO₃ and PZT : Pb (Zr, Ti) 0₃ capacitor films prepared by chemical vapor deposition with conformal step-coverage are necessary for giga-bits-scale memory, ferroelectric memory (FeRAM) and embedded-memory on system LSI. CVD technology optimized for deposition of BST and PZT capacitor films using tetrahydrofuran (THF) solution CVD source and original high performance vaporizer were developed. In this paper, highly conformal step-coverage, excellent composition controllability and high productivity for BST and PZT films by this CVD method are shown.
収録刊行物
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- 電気材料技術雑誌
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電気材料技術雑誌 11 (1), 56-61, 2002-05-25
電気材料技術懇談会
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詳細情報 詳細情報について
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- CRID
- 1571698602577362816
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- NII論文ID
- 120007039461
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- NII書誌ID
- AN10426571
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- ISSN
- 09189890
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- Web Site
- http://hdl.handle.net/11094/81698
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- 本文言語コード
- ja
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- データソース種別
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- CiNii Articles