Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?
Journal
-
- IEEE-IEDM Tech. Dig., 2007
-
IEEE-IEDM Tech. Dig., 2007 673-676, 2007
- Tweet
Details 詳細情報について
-
- CRID
- 1571980075922066816
-
- NII Article ID
- 10026037418
-
- Data Source
-
- CiNii Articles