0.67 μm Room-Temperature Operation of GaInAsP/AlGaAs Lasers on GaAs Prepared by LPE

被引用文献1件
  • Kishino Katsumi
    Department of Electrical and Electronics, Sophia University
  • Koizumi Yoshihiro
    Research Laboratory of Precision Machinary and Electronics, Tokyo Institute of Technology
  • Yokochi Akira
    Department of Electrical and Electronics, Sophia University
  • Kinoshita Susumu
    Research Laboratory of Precision Machinary and Electronics, Tokyo Institute of Technology
  • Tako Toshiharu
    Department of Physics, Science University of Tokyo

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説明

Room temperature pulsed operation of 0.67 μm wavelength GaInAsP/AlGaAs lasers on GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched those of the Al0.6Ga0.4As cladding layers. The threshold current density Jth of the device was 8 kA/cm2.

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詳細情報 詳細情報について

  • CRID
    1571980077242721664
  • NII論文ID
    110003929612
  • NII書誌ID
    AA10650595
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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