LPE Growth of In<SUB>1−<I>x</I></SUB>Ga<I><SUB>x</SUB></I>As<SUB>1−<I>y</I></SUB>P<I><SUB>y</SUB></I> with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates

  • Kato Takamasa
    Department of Electronics, Faculty of Engineering, Yamanashi University
  • Matsumoto Takashi
    Department of Electronics, Faculty of Engineering, Yamanashi University
  • Ishida Tetsuro
    Department of Electronics, Faculty of Engineering, Yamanashi University

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説明

The growth conditions of In1−xGaxAs1−yPy, layers on GaAs (111)B substrate and the photoluminescence (PL) properties of these layers are described. The temperature difference liquid phase epitaxial (LPE) method was used for crystal growth. Single PL peak corresponding to band-to-band transition was observed from the layers over the range of 1.73\lesssimEg\lesssim1.98 eV at 77 K. The half width of the PL band was less than 20 meV and independent of the peak energy. These results show that the grown layers have good crystalline qualities.

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詳細情報 詳細情報について

  • CRID
    1571980077244089344
  • NII論文ID
    110003928883
  • NII書誌ID
    AA10650595
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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