LPE Growth of In<SUB>1−<I>x</I></SUB>Ga<I><SUB>x</SUB></I>As<SUB>1−<I>y</I></SUB>P<I><SUB>y</SUB></I> with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates
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- Kato Takamasa
- Department of Electronics, Faculty of Engineering, Yamanashi University
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- Matsumoto Takashi
- Department of Electronics, Faculty of Engineering, Yamanashi University
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- Ishida Tetsuro
- Department of Electronics, Faculty of Engineering, Yamanashi University
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説明
The growth conditions of In1−xGaxAs1−yPy, layers on GaAs (111)B substrate and the photoluminescence (PL) properties of these layers are described. The temperature difference liquid phase epitaxial (LPE) method was used for crystal growth. Single PL peak corresponding to band-to-band transition was observed from the layers over the range of 1.73\lesssimEg\lesssim1.98 eV at 77 K. The half width of the PL band was less than 20 meV and independent of the peak energy. These results show that the grown layers have good crystalline qualities.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 21 (11), L667-L669, 1982
社団法人応用物理学会
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詳細情報 詳細情報について
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- CRID
- 1571980077244089344
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- NII論文ID
- 110003928883
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- NII書誌ID
- AA10650595
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- 本文言語コード
- en
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- データソース種別
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