A Study of RF(Radio Frequency) noise immunity for Op-amps

3 Citations 7 References

Bibliographic Information

Other Title
  • オペアンプの RF(Radio Frequency) ノイズ耐性の検討

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Description

This paper describes noise immunity for op-amps (LF356,451) when RF signals (10M to 2GHz) are applied at the op-amps terminals. In both op-amps, undesired actions were observed when the RF signals were applied at the input terminals. It was found that these actions were caused by rectification at the input transistors. When the RF signals were applied at voltage source terminals or output terminals, the same actions were observed only 451. It is considered that the reasons are 1) the RF signals leak to the input terminals and rectified to the signals at the input transistors and 2) 451 has higher rectification efficiency of the input transistors than LF356.

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Details 詳細情報について

  • CRID
    1571980077283538944
  • NII Article ID
    110003190679
  • NII Book ID
    AN10013108
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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