A Study of Growth Mechanism in TEOS-O_3 APCVD SiO_2

Bibliographic Information

Other Title
  • TEOS-O_3 APCVD SiO_2の成膜機構検討

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Description

Underlayer dependence of TEOS-O_3 SiO_2 was studied using ATR- FTIR,AFM and SEM.It is found that the underlayer dependence is related to the density of the TEOS oligomer adsorption sites,which are Si-O-R bonds on the underlayer surface.TEOS oligomers with low polymerization are easily adsorbed to Si-O-R bonds and an initial growth film is formed.However,if the adsorption sites of Si-O-R bonds do not exist on the underlayer surface,high polymerized TEOS oligomers adsorb,because the vapor pressure of high polymerized oligomer is low.The difference in the size of adsorbed TEOS oligomers relates to the adsorption-sites density on the surface of initial growth film.It results in the underlayer dependence of TEOS-O_3 SiO_2.On the other hands,It is found that the film charactoristics also depend on the surface roughness of underlayer surface.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 94 (367), 71-77, 1994-11-25

    The Institute of Electronics, Information and Communication Engineers

Keywords

Details 詳細情報について

  • CRID
    1571980077367474048
  • NII Article ID
    110003310307
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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