Enhanced solid phase crystal growth of Si by Sn doping

13 References
  • KOJIMA Satoshi
    Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University
  • SAITO Yoji
    Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University

Bibliographic Information

Other Title
  • スズ添加によるシリコン固相成長促進現象

Search this article

Description

Polycrystalline-silicon (poly-Si) is important materials for high performance thin film transistors (TFTs). In this study, we have tried to crystallize Sn doped a-Si film deposited on Si0_2 at low temperature. 0ur results show that solid phase crystallization temperature is strongly, reduced from 600℃ to 300℃ by Sn doping. SEM analysis of the crystallized film surface sllows that the gain size of Sn doped Si is about 0.1μm. We consider that the crystallization at low temperature is due to the supply of the crystalline seeds and enhanced the crystal growth induced by Sn.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 96 (396), 37-42, 1996-12-06

    The Institute of Electronics, Information and Communication Engineers

References(13)*help

See more

Keywords

Details 詳細情報について

  • CRID
    1571980077372929152
  • NII Article ID
    110003309610
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

Report a problem

Back to top