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Enhanced solid phase crystal growth of Si by Sn doping
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- KOJIMA Satoshi
- Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University
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- SAITO Yoji
- Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University
Bibliographic Information
- Other Title
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- スズ添加によるシリコン固相成長促進現象
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Description
Polycrystalline-silicon (poly-Si) is important materials for high performance thin film transistors (TFTs). In this study, we have tried to crystallize Sn doped a-Si film deposited on Si0_2 at low temperature. 0ur results show that solid phase crystallization temperature is strongly, reduced from 600℃ to 300℃ by Sn doping. SEM analysis of the crystallized film surface sllows that the gain size of Sn doped Si is about 0.1μm. We consider that the crystallization at low temperature is due to the supply of the crystalline seeds and enhanced the crystal growth induced by Sn.
Journal
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- Technical report of IEICE. SDM
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Technical report of IEICE. SDM 96 (396), 37-42, 1996-12-06
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1571980077372929152
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- NII Article ID
- 110003309610
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- NII Book ID
- AN10013254
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- Text Lang
- ja
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- Data Source
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- CiNii Articles