Photoelectrochemical Memory System Using Azo Compound LB Film

  • Fujishima A.
    Depertment of Synthetic Chemistry,Faculty of Engineering,The University of Tokyo
  • Hashimoto K.
    Depertment of Synthetic Chemistry,Faculty of Engineering,The University of Tokyo
  • Morigaki K.
    Depertment of Synthetic Chemistry,Faculty of Engineering,The University of Tokyo
  • Enomoto T.
    Depertment of Synthetic Chemistry,Faculty of Engineering,The University of Tokyo
  • Z F.Liu
    Depertment of Synthetic Chemistry,Faculty of Engineering,The University of Tokyo

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Description

A photoelectrochemical memory system is created by combining the photochemical reduction-oxidation of azo compounds in LB film.This novel system has the advantages of storage density up to 10^12 bits/cm^2,non-destructive readout,multiple memory function,rewritability and room-temperature working condition.

Journal

  • Technical report of IEICE. OME

    Technical report of IEICE. OME 93 (61), 19-26, 1993-05-24

    The Institute of Electronics, Information and Communication Engineers

Details 詳細情報について

  • CRID
    1571980077373857536
  • NII Article ID
    110003300823
  • NII Book ID
    AN10013334
  • Text Lang
    en
  • Data Source
    • CiNii Articles

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